Ferroelectric, ferromagnetic, and dielectric behaviors of (Na_(0.5)Bi_(0.5))_(0.98)Ce_(0.02)(Ti_(0.99)Fe_(0.01))O_3-BiFe_(0.95)Mn_(0.05)O_3 solid-solution thin film

摘要

The (Na_(0.5)Bi_(0.5))_(0.98)Ce_(0.02)(Ti_(0.99)Fe_(0.01))O_3-BiFe_(0.95)Mn_(0.05)O_3 (NBTCeFe-BFOMn) solid-solution thin film was fabricated on LaNiO_3/Si substrate by metal organic decomposition. The leakage current density of NBTCeFe-BFOMn film at 400 kV/cm was reduced by approximately two orders of magnitude by reducing the density of oxygen vacancies and forming the defect complexes, compared with Na_(0.5)Bi_(0.5)TiO_3 film. Much enhanced ferroelectric and magnetic properties were achieved in NBTCeFe-BFOMn film with a remanent polarization of 32.6 μC/cm~2 and a saturated magnetization of 6.2 emu/cm~3. The dielectric constant-voltage curve coincides well with the polarization-electric field loop.