Growth Temperature Dependence of Ga_2O_3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition

摘要

In this report, plasma-enhanced atomic layer deposition (PEALD) technique was used to deposit dielectric Ga_2O_3 thin films at various temperatures (50, 150, and 250 deg C) on p-type Si (100) and quartz substrates with an alternating supply of reactant source, [(CH_3)_2GaNH_2]_3, and oxygen plasma of 150 W. The growth temperature dependences of the Ga_2O_3 thin films were investigated. An atomic force microscope and an X-ray diffractometer were used to investigate the surface morphologies and the structural properties of the thin films. The electrical properties of Pt/Ga_2O_3/Si structured thin film were investigated by using a semiconductor parameter analyzer. A spectrophotometer was used to measure the transmittances of the thin films, and the band gap energies of the thin films were calculated.