首页> 外文期刊>Integrated Ferroelectrics >THE ELECTROMECHANICAL PROPERTIES OF HIGHLY [100] ORIENTED [Pb(Zr_(0.52)Ti_(0.48))O_3, PZT] THIN FILMS
【24h】

THE ELECTROMECHANICAL PROPERTIES OF HIGHLY [100] ORIENTED [Pb(Zr_(0.52)Ti_(0.48))O_3, PZT] THIN FILMS

机译:高度[100]取向的[Pb(Zr_(0.52)Ti_(0.48))O_3,PZT]薄膜的机电性能

获取原文
获取原文并翻译 | 示例
           

摘要

Lead zirconate titanate [Pb(Zr_(0.52)Ti_(0.48))O_3, PZT] thin films were deposited on Pt (111)/Ti/SiO_2/Si and Pt (200)/Ti/SiO_2/Si substrates by sol-gel method. Pyrolysis temperature and time were used to control the orientation of the thin films. A PbO buffer layer was also used to enhance the growth of (100)/(001) orientation. Poling highly (100) oriented PZT 52/48 thin films deposited on Pt (111) led to cracking and/or incomplete poling as a consequence of the additional residual stresses introduced by the a to c domain orientation switching. These problems of cracking and incomplete poling did not occur for the (100)/(001)-oriented PZT films deposited on the Pt (200), which possess high piezoelectric coefficients with maximum e_(31.f) and d_(33.f) of -13.9 + - 4C/m~2 and approx 80 + - 25 pC/N, respectively. The elastic and electromechanical properties were measured using nanoindentation for films with different texture and compared with data obtained using a flexural method.
机译:钛酸锆酸铅[Pb(Zr_(0.52)Ti_(0.48))O_3,PZT]薄膜通过溶胶凝胶法沉积在Pt(111)/ Ti / SiO_2 / Si和Pt(200)/ Ti / SiO_2 / Si衬底上方法。热解温度和时间用于控制薄膜的取向。 PbO缓冲层还用于增强(100)/(001)取向的生长。沉积在Pt(111)上的高取向(100)取向的PZT 52/48薄膜导致开裂和/或不完全极化,这是由于a到c域取向转换引入的额外残余应力的结果。对于沉积在Pt(200)上的(100)/(001)取向的PZT膜,不会发生这些开裂和不完全极化的问题,这些膜具有较高的压电系数,且最大e_(31.f)和d_(33.f) )分别为-13.9 +-4C / m〜2和约80 +-25 pC / N。使用纳米压痕对具有不同质地的薄膜测量弹性和机电性能,并将其与使用挠曲法获得的数据进行比较。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号