A Study on the Crystalline Orientation and Electromechanical Properties of PZT and Doped PZT Thin Films by Using the Sol-Gel Method

摘要

This study investigated the crystalline orientation and electromechanical characteristics of PZT films fabricated with various concentrations of sol-gel solution, and dopants such as Nb and Zn. Crack-free and 1-ìm-thick films with a pure perovskite phase were obtained on Pt/Ti/SiO_2/Si by modified sol-gel deposition method. The degree of (111) orientation was promoted by a higher concentration of a sol-gel solution. Excellent electromechanical characteristics were measured in PZN-PZT films. The highest remnant polarization and d_(33) piezoelectric coefficient were 25.1 pC/cm~2 and 240 pC/N, respectively. The sol-gel driven PZN-PZT films could be attractive for application to piezoelectrically operated microelectronic devices.