An HSPICE Macromodel for Resistive Random Access Memory Cell Based on Cu_xO System

Yiqing Ding; Xin Liu; Yinyin Lin

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An HSPICE Macromodel for Resistive Random Access Memory Cell Based on Cu_xO System

机译：基于Cu_xO系统的电阻随机存取存储器HSPICE宏模型。

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A general HSPICE macromodel for the Cu_xO based resistive random access mem-ory(ReRAM) cell is presented in this paper. It can simulate both the dc and transient behavior of ReRAM cells. The simulation results were compared with the experimental results and exhibited desirable accordance.

机译：本文提出了基于Cu_xO的电阻式随机存取存储器（ReRAM）单元的通用HSPICE宏模型。它可以模拟ReRAM单元的直流和瞬态行为。仿真结果与实验结果进行了比较，并显示出令人满意的一致性。

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《Integrated Ferroelectrics》 |2008年第0期|共6页
作者
Yiqing Ding; Xin Liu; Yinyin Lin;
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正文语种 eng
中图分类电磁学、电动力学;
关键词
Nonvolatile memory (NVM); resistive RAM (ReRAM); macromodel; integrated circuit (IC);

机译：非易失性存储器（NVM）;电阻性RAM（ReRAM）;宏模型;集成电路（IC）;

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专利

1. An HSPICE Macromodel for Resistive Random Access Memory Cell Based on Cu_xO System [J] . Yiqing Ding, Xin Liu, Yinyin Lin Integrated Ferroelectrics . 2008,第0期

机译：基于Cu_xO系统的电阻随机存取存储器HSPICE宏模型。
2. Resistive switching characteristics of Si_3N_4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications [J] . Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Applied Physics Letters . 2015,第21期

机译：具有隧道势垒的基于Si_3N_4的电阻切换随机存取存储单元的电阻切换特性，适用于高密度集成和低功耗应用
3. Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics [J] . Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Japanese journal of applied physics . 2012,第4ISSUE2期

机译：对基于氧化物的电阻式随机存取存储单元改善电阻开关特性的区域和结构影响
4. A parameterized SPICE macromodel of resistive random access memory and circuit demonstration [C] . Chang Huan-Lin, Li Hsuan-Chih, Liu C. W., 2011 International Conference on Simulation of Semiconductor Processes and Devices . 2011

机译：电阻式随机存取存储器的参数化SPICE宏模型和电路演示
5. Effect of Interfacial Top Electrode Layer on the Performance of Niobium Oxide Based Resistive Random Access Memory [D] . Manjunath, Vishal Jain 2019

机译：界面上电极层对基于氧化铌的电阻型随机存取存储器性能的影响
6. Remote control of resistive switching in TiO2 based resistive random access memory device [O] . Dwipak Prasad Sahu, S. Narayana Jammalamadaka -1

机译：基于TiO2的电阻式随机存取存储设备中的电阻切换的远程控制
7. Novel Multi-Level-Cell Resistive Random Access Memory based Reconfigurable Physical Unconable Functions Case [O] . Gyo Sub Lee, Hyunsu Ju 2018

机译：基于新型多级单元电阻随机存取存储器的可重新配置物理无法解决的功能
8. Effect of Atomic Layer Depositions (ALD)-Deposited Titanium Oxide (TiO2) Thickness on the Performance of Zr40Cu35Al15Ni10 (ZCAN)/TiO2/Indium (In)-Based Resistive Random Access Memory (RRAM) Structures. [R] . Chin, M. L., Amani, M., O'Regan, T. P., 2015

机译：原子层沉积（aLD） - 沉积二氧化钛（TiO2）厚度对Zr40Cu35al15Ni10（ZCaN）/ TiO2 /铟（In）基电阻随机存取存储器（RRam）结构性能的影响。

An HSPICE Macromodel for Resistive Random Access Memory Cell Based on Cu_xO System

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