First 0.18 mum SBT-Based Embedded FeRAM Technology with Hydrogen Damage Free Stacked Cell Structure

摘要

An SBT-based embedded FeRAM has been successfully developed for the first time, which has been fabricated by using the 0.18 mum CMOS multi-level metal logic process. The highly-reliable FeRAM characteristics have been attained by the newly developed stacked cell structure which is fully enveloped by the top and bottom hydrogen barriers, resulting in the elimination of the hydrogen damage of the 0.18 mum multilevel metal process. The developed 0.18 mum SBT-based embedded FeRAM technology is most promising for commercialization of 0.18 mum embedded FeRAM and beyond.