0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V

摘要

We have successfully developed a 0.18 /spl mu/m SBT-based 1 Mbit embedded FeRAM, which operates at a very low voltage of 1.1 V and ensures the data retention time up to 1000 hours at 125/spl deg/C. The low voltage operation and high reliability characteristics of 0.18 /spl mu/m embedded FeRAM are the first demonstration to our knowledge. These excellent characteristics have been attained by newly developed FeRAM completely encapsulated by hydrogen barriers.