The low frequency behaviour in high frequency capacitance-voltage characteristics due to contribution of band-to-band tunnelling and generation-recombination in Hg_(0.75)Cd_(0.25)Te MIS capacitors

摘要

Hg_(1-x)Cd_xTe Metal-Insulator-Semiconductor (MIS) capacitors were studied both experimentally and theoretically to investigate the capacitance contributions due to band-to-band (btb) tunnelling and generation-recombination (gr) of carriers to inversion layer capacitance. A good fit to the data has been obtained by including the btb contributions rather than gr contributions.