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Far infrared and Raman response in tetragonal PZT ceramic films

机译:四方PZT陶瓷薄膜的远红外和拉曼响应

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摘要

Pba(0.38)Ti(0.62)O(3) and PbZr0.36Ti0.64O3 thick films deposited by screen printing on (0 0 0 1) single crystal sapphire substrates and prepared at two different sintering temperatures, were studied by Fourier-transform infrared reflectivity, time-domain THz transmission spectroscopy and micro-Raman spectroscopy. The dielectric response is discussed using the Lichtenecker model to account for the porosity of the films and to obtain the dense bulk dielectric functions. Results are compared with bulk tetragonal PZT 42/58 ceramics. The dynamic response in the films is dominated by an overdamped lead-based vibration in the THz range, as known in PZT, but its evaluated dielectric contribution is affected by the porosity and roughness of the surface. (C) 2015 SECV. Published by Elsevier Espana, S.L.U.
机译:通过傅立叶变换红外技术研究了通过丝网印刷在(0 0 0 1)单晶蓝宝石衬底上沉积并在两种不同烧结温度下制备的Pba(0.38)Ti(0.62)O(3)和PbZr0.36Ti0.64O3厚膜反射率,时域太赫兹透射光谱和显微拉曼光谱。使用Lichtenecker模型讨论了介电响应,以说明薄膜的孔隙率并获得致密的整体介电函数。将结果与块状四方PZT 42/58陶瓷进行比较。薄膜的动态响应主要由PZT中已知的太赫兹(THz)范围内的铅基振动引起,但其评估的介电作用受表面孔隙率和粗糙度的影响。 (C)2015年SECV。由Elsevier Espana,S.L.U.发布

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