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XPS Studies of PZT Films Deposited by Metallic Lead and Ceramic PZT Dual Target Co-Sputtering

机译:金属铅与陶瓷PZT双靶共溅射沉积PZT薄膜的XPS研究

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摘要

The dependence of the chemical states of the constituent elements of a PZT thin film prepared by RF magnetron co-sputtering using ceramic PZT and metallic Pb dual target materials on the Ar{sup}+ etching time was studied using XPS. The metallic Pb, lead oxide and Pb in PZT led to the different binding energies of the Pb lines. The intensity of binding energy of metallic Pb relative to that of bulk Pb increased with the depth of the film. The peak position and the line shape of the O{sub}(1s) electron was associated with the different binding energies of oxygen, which interacts with Pb and Ti and Zr atoms to form the metal oxides, and the softening of the O{sub}(1s) bonds by the bonding interaction in Ti-O, Zr-0 and Pb-O. The broad Ti{sub}(2p3/2) line in the PZT film could has been associated with the various charge state of Ti and no spectral changes of Ti{sub}(2p) and Zr{sub}(3d) were observed as the Ar{sup}+ ion sputtering time was increased.
机译:使用XPS研究了使用陶瓷PZT和金属Pb双靶材料通过RF磁控管共溅射制备的PZT薄膜组成元素的化学状态对Ar {sup} +蚀刻时间的依赖性。 PZT中的金属Pb,氧化铅和Pb导致Pb线具有不同的结合能。金属Pb相对于本体Pb的结合能强度随薄膜深度的增加而增加。 O {sub}(1s)电子的峰值位置和线形与氧的不同结合能相关,氧与Pb和Ti和Zr原子相互作用形成金属氧化物,并使O {sub }(1s)通过Ti-O,Zr-0和Pb-O中的键相互作用而键合。 PZT膜中的宽Ti {sub}(2p3 / 2)线可能与Ti的各种电荷状态有关,并且未观察到Ti {sub}(2p)和Zr {sub}(3d)的光谱变化,因为Ar {sup} +离子溅射时间增加。

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