Influence of the Lead Source Materials on the Microstructure and Ferroelectric Properties of PZT Films Sputter-Deposited Using Lead and Lead Oxide

摘要

In this investigation, PZT films were sputter-deposited on Si/SiO{sub}2/Ti/Pt substrates using a dual-target system. The dual targets Pb/PZT(PbZr{sub}0.54Ti{sub}0.46O{sub}3) and PbO/PZT(PbZr{sub}0.54Ti{sub}0.46O{sub}3) were used to reveal the effects of various lead compensation source materials on the microstructure and ferroelectric properties of the films. The structures of the films were characterized by X-ray diffractometry (XRD) and field emission scanning electron microscopy (FESEM). The chemical binding state was determined using X-ray photoelectron spectrometry (XPS). Ferroelectric polarizability was measured using a Radiant Technology RT66A tester. The influence of deposition temperatures on the microstructure and ferroelectric properties of the films was studied. Perovskite PZT films were successfully deposited using the Pb/PZT and the PbO/PZT dual target sputtering systems at a substrate temperature of between 500 and 580℃. Structural change was elucidated as a function of deposition temperatures and the lead sources were correlated with the ferroelectric properties of the film. The ferroelectric characteristics of the PZT films deposited using the PbO/PZT dual target were better than those of films deposited using the Pb/PZT dual target, because the former films had a higher bonding energy.