Efficient photoelectrochemical overall water-splitting of MoS2/g-C3N4 n-n type heterojunction film

摘要

The construction of heterojunctions has attracted considerable attention among the various strategies of water-splitting for hydrogen evolution due to their band structure advantages. In this research, we combined chemical vapor deposition and pulsed laser deposition to fabricate MoS2/g-C3N4 heterojunction films on indium-tin oxide glass substrates, and we studied the photoelectrochemical (PEC) performance. The x-ray diffraction, x-ray photoelectron spectroscopy (XPS), and scanning electron microscope characterizations suggested the successful preparation of MoS2/g-C3N4 heterojunction films. In particular, the shifts of the peak positions in the XPS spectra indicated the formation of a strong interaction between the g-C3N4 and MoS2 films. After depositing MoS2 on the g-C3N4 film, the visible-light absorption was enhanced and broadened, the electrical conductivity improved, and the intensity of the photoluminescence peak decreased. As a result, the greater generation, faster transport, and lower recombination rate of electrons and holes caused the heterojunction films to show higher PEC performance. More importantly, the obtained MoS2/g-C3N4 film was confirmed to be an n-n type heterojunction and to have a typical type-II band structure, which could indeed suppress the recombination and promote the separation, transfer, and transport of photogenerated electron-holes. Finally, the obtained MoS2/g-C3N4 film successfully achieved the overall water-splitting and the H-2 evolution rate when the visible-light radiation reached 252 mu mol/h.