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MANUFACTURING METHOD FOR MULTILAYERD g-C3N4/MoS2 STRUCTURE
MANUFACTURING METHOD FOR MULTILAYERD g-C3N4/MoS2 STRUCTURE
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机译:多层G-C3N4 / MOS2结构的制造方法
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摘要
The present invention relates to a method for manufacturing an alternatingly laminated gC 3 N 4 /MoS 2 structure and to an alternately laminated gC 3 N 4 /MoS 2 structure prepared thereby. The method for producing an alternately stacked gC 3 N 4 /MoS 2 structure according to the present invention can prepare a catalyst material having excellent physical, photochemical and electrochemical properties through a simple process using a colloidal suspension of a precursor and an acid. In addition, the alternately stacked gC 3 N 4 /MoS 2 structure according to the present invention has excellent photochemical and electrochemical catalytic properties, and exhibits versatility, compared to conventional catalyst materials, particularly in nitrogen fixation reaction and hydrogen evolution reaction. It can be usefully used as a catalyst.
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机译:本发明涉及制造交替层叠的GC 3 N 4 / MOS 2结构的方法和由此制备的交替层叠的GC 3 N 4 / MO 2结构。 通过使用前体和酸的胶体悬浮液通过简单的方法制备根据本发明的交替堆叠的GC 3 N 4 / MO 2结构的制备方法可以制备具有优异的物理,光化学和电化学性质的催化剂材料。 另外,根据本发明的交替堆叠的GC 3 N 4 / MO 2结构具有优异的光化学和电化学催化性能,与常规催化剂材料相比,具有优异的光化学和电化学催化性能,特别是在氮固定反应和氢进化反应中。 它可以用作催化剂。
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