Study of Defects in High Energy Ion Implanted ZnO Crystals

摘要

Positron annihilation spectroscopy (PAS) was employed for characterization of defects in the hydrothermally (HT) grown zinc oxide single crystals irradiated by high energy ions. Defects created in ZnO crystals by 2.5 MeV protons, 7.5 MeV N~(3+) and 167 MeV Xe~(26+) ions were compared. The virgin ZnO crystals contain Zn-vacancies associated with hydrogen. Ion implantation introduced additional defects, namely Zn+O di-vacancies in crystals irradiated by protons and small vacancy clusters in samples implanted by N and Xe ions.