机译:高能离子植入ZnO晶体缺陷研究
Faculty of Mathematics and Physics Charles University in Prague V Hole?ovi?kách 2 Prague 8 CZ 18000 Czech Republic;
Faculty of Mathematics and Physics Charles University in Prague V Hole?ovi?kách 2 Prague 8 CZ 18000 Czech Republic;
Faculty of Mathematics and Physics Charles University in Prague V Hole?ovi?kách 2 Prague 8 CZ 18000 Czech Republic;
Faculty of Mathematics and Physics Charles University in Prague V Hole?ovi?kách 2 Prague 8 CZ 18000 Czech Republic;
Institute of Radiation Physics Helmholtz-Zentrum Dresden-Rossendorf Bautzner Landstr. 400 01328 Dresden Germany;
Nuclear Physics Institute Academy of Sciences of the Czech Republic CZ 250 68 Husinec-?e? Czech Republic;
Flerov Laboratory of Nuclear Reactions Joint Institute for Nuclear Research 141 980 Dubna Moscow region Russian Federation;
Flerov Laboratory of Nuclear Reactions Joint Institute for Nuclear Research 141 980 Dubna Moscow region Russian Federation;
Zinc oxide; ion implantation; radiation induced defects.;
机译:高能离子植入ZnO晶体缺陷研究
机译:锂离子注入引起的ZnO缺陷的能量可变慢正电子束研究
机译:锂离子注入引起的ZnO缺陷的能量可变慢正电子束研究
机译:高能离子植入ZnO晶体缺陷研究
机译:砷化镓晶体生长中缺陷,杂质和载体的特征及其对电性能,热稳定性和注入退火特性的影响。
机译:ZnO纳米晶向Eu3 +离子的能量转移机理研究
机译:退火熔融生长ZnO单晶中T2缺陷及E3深能级发射特性的研究