Effects of Ion Current Density on Defects Formation in In~+ Implanted Single Crystal ZnO

摘要

In this paper, we report the role of implantation ion current density in damage creation in single crystal ZnO. Indium was implanted at room temperature on the Zn face of single crystal ZnO (0001) with a fluence of 1 X 10~(15) ions/cm~2 under an acceleration voltage of 120 keV. During implantation, the ion current densities were 0.7 mu A/cm~2 and 1.4 mu A/cm~2 respectively. Following implantation the samples were heated in air at 600 deg C, 800 deg C and 1000 deg C respectively for 60 minutes by RTA (300 deg C/minute) technique as a quick process. Damage profile and annealing effect were studied by the combination of Rutherford Backscattering Spectrometry and Channeling technique using 2 MeV ~4He~+ ion-beams. Our RBS/C results reveal the formation of a damage region between the surface and bulk which suggests that the crystalline quality of single crystal ZnO is degraded by ion implantation. Our results also show that disorder production inside single crystalline ZnO is dependent on implantation ion current density.