Aluminium Gallium Nitride (AlGaN)/Gallium Nitride(GaN)/Boron Gallium Nitride (BGaN) High Electron Mobility Transistors (HEMT): From Normally-On to Normally-Off Transistor

摘要

In this paper, using the simulator TCAD SILVACO, the physical parameters to pass from a normallyon to a normally-off AlGaN/GaN HEMT with a BGaN back-barrier, was studied. With n-doped donor layer at 1 × 10~(16) cm~(-3), as a results we obtain a threshold voltage of 0.509 V normally-off AlGaN/GaN HEMT. The first transistor is able to operate in high power in better way; the second one is efficient for weak signals up to the X-band, and it has the advantage of being normally-off.