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An immersed jet array impingement cooling device with distributed returns for direct body liquid cooling of high power electronics

机译:具有分布式返回的浸入式喷射阵列冲击冷却装置,用于高功率电子的直接体液冷却

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Heat removal of high-power electronic devices has become the bottleneck that restricts the working performances. For ultrahigh heat flux density, even a thin layer of thermal interface material will dominate the temperature rise along the whole heat dissipation path. The existing liquid cooling only consider the cooling of the top surface of the electronic devices/chips, causing insufficient utilization of the cooling potential. In this paper, an immersed jet array impingement cooling device with distributed returns was designed, fabricated, and tested. In the proposed cooling device, the chip is immersed in the coolant and the coolant is ejected onto all the immersed surface of the electronics through the impinging jets, enabling to provide body cooling for high-power electronics. To prevent the jet interference between adjacent jets, distributed extraction returns were set between the adjacent jets for coolant to exit the impingement domain without flowing past the surrounding Jets. The measured average temperature of the high-power chip with input heat power 550 W and flow rate 1000 ml/min is 77.0 degrees C, where the effective heat flux is 110 W/cm(2), and the inlet coolant temperature is maintained to be 40 degrees C. The average temperature of the high-power chip under the input heat power of 800 W (160 W/cm(2)) is 78.7 degrees C with the flow rate reaching 2000 ml/min. The effective heat transfer coefficient of 41,377 W/m(2).K in maximum was achieved. The present body cooling is expected to provide high heat removal ability and be used for ultrahigh heat flux density electronics.
机译:高功率电子设备的散热已成为限制工作性能的瓶颈。对于超高热通量密度,即使是薄层的热界面材料也将沿着整个散热路径占据温度升高。现有的液体冷却仅考虑电子器件/芯片的顶表面的冷却,从而导致冷却电位不足。本文设计了一种具有分布式返回的浸入式喷射阵列冲击冷却装置,制造和测试。在所提出的冷却装置中,将芯片浸入冷却剂中,冷却剂通过撞击喷射器喷射到电子器件的所有浸没表面上,使得能够为高功率电子器件提供体冷却。为了防止相邻喷射之间的喷射干扰,在相邻的喷射器之间设置分布式提取返回,用于冷却剂以离开冲击域而不流过周围的喷射。具有输入热功率550 W的高功率芯片的测量的平均温度和1000mL / min的功率为77.0c,其中有效的热通量为110w / cm(2),并且将入口冷却剂温度保持在在800W(160W / cm(2))的输入热功率下,高功率芯片的平均温度为78.7摄氏度,流速达到2000ml / min。实现最大值41,377W / m(2).k的有效传热系数。预期本体冷却可提供高散热能力并用于超高热通量密度电子器件。

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