Demonstration of Fowler-Nordheim Tunneling in Simple Solution-Processed Thin Films

摘要

The production of high-quality thin-film insulators is essential to develop advanced technologies based on electron tunneling. Current insulator deposition methods, however, suffer from a variety of limitations, including constrained substrate sizes, limited materials options, and complexity of patterning. Here, we report the deposition of large-area Al2O3 films by a solution process and its integration in metal insulator metal devices that exhibit I-V signatures of Fowler-Nordheim electron tunneling. A unique, high-purity precursor based on an aqueous solution of the nanocluster flat-Al-13 transforms to thin Al2O3 insulators free of the electron traps and emission states that commonly inhibit tunneling in other films. Tunneling is further confirmed by the temperature independence of device current.