机译:居中的OctaHedron能够实现高速相位变化内存,具有改进的数据保持和降低的功耗
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol Lab Nanotechnol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol Lab Nanotechnol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol Lab Nanotechnol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol Lab Nanotechnol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol Lab Nanotechnol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol Lab Nanotechnol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
East China Normal Univ Minist Educ Key Lab Polar Mat &
Devices Shanghai 200062 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol Lab Nanotechnol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol Lab Nanotechnol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Microsyst &
Informat Technol Lab Nanotechnol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;
automotive electronics; phase change memory; high speed; Ge-Te alloys; first-principles calculation;
机译:居中的OctaHedron能够实现高速相位变化内存,具有改进的数据保持和降低的功耗
机译:Al-Sb-Se合金的长数据保留和低功耗相变存储应用研究
机译:用于高速和低功率相变存储器的掺锌非晶Sb_7Te_3薄膜的改善的相变特性
机译:N掺杂GeTe相变材料可保持高温数据并降低功耗
机译:改进相变存储器(PCM)和自旋扭矩传递磁性RAM(STT-MRAM)作为下一代存储器:电路角度。
机译:CMOS兼容的铁电NAND闪存用于高密度低功耗和高速三维内存
机译:相变存储器:增加相变记忆玻璃的原子包装效率,以降低结晶时的密度变化(ADV。电子。Matter。9/2018)