PHASE CHANGEABLE MEMORY ELEMENT USING INSULATION NANO PARTICLES, A FLEXIBLE PHASE CHANGEABLE MEMORY ELEMENT, AND A MANUFACTURING METHOD THEREOF CAPABLE REDUCING THE POWER CONSUMPTION OF AN MEMORY ELEMENT

摘要

PURPOSE: A phase changeable memory element using insulation nano particles, a flexible phase changeable memory element, and a manufacturing method thereof are provided to reduce reset current by reducing a contact area between a phase changeable layer and an electrode.;CONSTITUTION: A brush layer(11) is laminated on a substrate(10). A block copolymer solution is coated on the brush layer. The coated block copolymers are assembled itself through an annealing process. The self assembled block copolymers implement a patterning. A specific polymer block(13) among the self assembled block copolymers is removed by the patterning.;COPYRIGHT KIPO 2012