METHOD OF MANUFACTURING A PHASE CHANGEABLE MEMORY CELL HAVING A BUFFER PATTERN IN A DATA STORAGE ELEMENT AND PHASE CHANGEABLE MEMORY MANUFACTURED THEREBY

摘要

A method for fabricating a phase change memory cell having a buffer pattern in a data storage element is provided to reduce reset current by decreasing the stress applied to the phase change material pattern by a buffer pattern. A first electrode(150) is formed on a semiconductor substrate(110). A data storage element(166) is formed on the first electrode, including a phase change material pattern, an insulation layer pattern and a buffer pattern that are sequentially stacked. A second electrode(174) is formed on the sidewall and upper surface of the data storage element. The process for forming the second electrode can include the following steps. A horizontal electrode(170) is formed to cover the upper surface of the data storage element. The sidewalls of the data storage element and the horizontal electrode are covered with a vertical electrode(172).