首页> 中文期刊> 《中国物理快报:英文版》 >Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

         

著录项

  • 来源
    《中国物理快报:英文版》 |2009年第11期|227-230|共4页
  • 作者单位

    State Key Laboratory of Functional Materials for Informatics Laboratory of Nanotechnology Shanghai Institute of Micro-system and Information Technology Chinese Academy of Sciences Shanghai 200050;

    Graduate School of the Chinese Academic of Sciences Beijing 100049;

    (Missing);

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

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