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Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

机译：Al-Sb-Se合金的长数据保留和低功耗相变存储应用研究

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摘要

Te-free phase-change material Al-Sb-Se is investigated and considered to be a promising candidate of storage medium for phase change memory (PCM) application. Alo.49Sb2.19Se exhibits a higher crystallization temperature (～222.7℃), a larger crystallization activation energy (～4.17eV), and a better data retention (～146.5 ℃ for 10 yr) in comparison with those of Ge_2Sb_2Te_5. The uniformity of material distribution for crystalline film improves the reliability of phase change memory. Al_(0.49)Sb_(2.19)Se-based memory cell significantly shows lower power consumption for SET/RESET reversible switching than that of Ge_2Sb_2Te_5-based one. Furthermore, PCM based on Al_(0.49)Sb_(2.19)Se shows endurance up to 3.5 × 10~3 cycles with stability resistance of about two orders of magnitude on/off ratio.
机译：不含Te的相变材料Al-Sb-Se被研究并被认为是相变存储器（PCM）应用存储介质的有希望的候选者。与Ge_2Sb_2Te_5相比，Alo.49Sb2.19Se具有更高的结晶温度（〜222.7℃），更大的结晶活化能（〜4.17eV）和更好的数据保持力（〜146.5℃，持续10年）。用于结晶膜的材料分布的均匀性提高了相变存储器的可靠性。与基于Ge_2Sb_2Te_5的存储单元相比，基于Al_（0.49）Sb_（2.19）Se的存储单元显着降低了SET / RESET可逆开关的功耗。此外，基于Al_（0.49）Sb_（2.19）Se的PCM表现出高达3.5×10〜3个循环的耐力，其稳定电阻约为两个数量级的开/关比。

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  • 来源
    《Journal of Applied Physics 》 |2014年第7期| 074304.1-074304.4| 共4页
  • 作者

    Zhonghua Zhang; Yifeng Gu; Sannian Song; Zhitang Song; Yan Cheng; Bo Liu; Yueqin Zhu; Dong Zhou; Songlin Feng;

  • 作者单位

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China,Graduate School of the Chinese Academy of Sciences, Beijing 100049, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

    State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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