A HIGH SPEED LOW POWER CONSUMPTION PHASE CHANGE MEMORY CELL ARRAY STRUCTURE AND HIGH DENSITY MEMORY DEVICE ARCHITECTURE HAVING THE SAME

摘要

The present invention is advantageous for high-density and high capacity with low power consumption, reducing the number of access transistors, by increasing the width (Width) of the access transistor can provide the current required for the phase change of the variable resistance (R _C ) sufficiently, the sensing (Sensing) method and the conventional phase change memory cell structure and to implement a power to drive low power phase change memory cell array structure of a number of times or less compared. Phase change memory cell array structure of the present invention, respectively, and a memory unit, each single one terminal commonly connected to the plurality of phase-change resistive element through the active region formed on a substrate; The plurality of phase change resistance element is connected in common the active region of the first terminal, the common word line and the gate to the plurality of phase-change resistive element, the transistor having a second terminal connected to a power source side; And a plurality of bit lines each connected to another one terminal of said plurality of phase-change resistive element.