机译:单层MOS2场效应晶体管的氢等离子体暴露和单层石墨烯的防止脱硫
Univ Delaware Dept Elect &
Comp Engn Newark DE 19716 USA;
US Army Sensors &
Elect Devices Directorate Res Lab Adelphi MD 20783 USA;
Univ Delaware Dept Elect &
Comp Engn Newark DE 19716 USA;
US Army Sensors &
Elect Devices Directorate Res Lab Adelphi MD 20783 USA;
Univ Delaware Dept Elect &
Comp Engn Newark DE 19716 USA;
Univ Delaware Dept Elect &
Comp Engn Newark DE 19716 USA;
US Army Sensors &
Elect Devices Directorate Res Lab Adelphi MD 20783 USA;
Univ Delaware Dept Elect &
Comp Engn Newark DE 19716 USA;
2D material; transistor; carrier scattering; desulfurization; contact resistance; hydrogen plasma treatment;
机译:单层MOS2场效应晶体管的氢等离子体暴露和单层石墨烯的防止脱硫
机译:具有可逆和可调宽带隙的氢化单层石墨烯及其场效应晶体管
机译:单层MOS2场效应晶体管中金属触点的电子照射
机译:双栅极单层MoS2沟道场效应晶体管的静电学建模
机译:弹道单层黑色磷金属氧化物半导体场效应晶体管的紧凑型造型
机译:具有可逆和可调宽带隙的氢化单层石墨烯及其场效应晶体管
机译:单层MOS2场效应晶体管的氢等离子体暴露和单层石墨烯的防止脱硫