Modeling electrostatics of double gated monolayer MoS2 channel field-effect transistors

机译：双栅极单层MoS2沟道场效应晶体管的静电学建模

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Analytical modeling of double gated field-effect transistor with conductive channel based on monolayer molybdenite (MoS2) is presented.

机译：提出了基于单层辉钼矿（MoS2）的具有导电沟道的双栅场效应晶体管的分析模型。

著录项

来源
《2014 29th International Conference on Microelectronics Proceedings》|2014年|107-109|共3页
会议地点 Belgrade(RS)
作者
Sheredeko Galina S.; Zemtsov Kirill S.; Zebrev Gennady I.;
展开▼
作者单位

Department of micro- and nanoelectronics of National Research Nuclear University MEPHI, Kashirskoe sh., 31, Moscow, Russiac;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS2 [J] . Wu Dianzhong, Zhang Zhiyong, Lv Danhui, Materials express: an international journal on multidisciplinary materials research . 2016,第2期

机译：基于化学气相沉积衍生的单层MoS2的高迁移率顶栅场效应晶体管和集成电路
2. Green's function approach for modeling of electrostatic effects in nanoscale fully depleted double-gate silicon-on-insulator metaloxide-semiconductor field-effect transistors [J] . Sharma Rajiv, Pandey Sujata, Jain Shail Bala International journal of numerical modelling . 2014,第1期

机译：纳米尺度静电效应建模的绿色功能方法完全耗尽双栅极绝缘体金属氧化物半导体场效应晶体管
3. Empirical Models of Phonon-Limited Electron Mobility for Ultrathin-Body Single-Gate and Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with (001) or (111) Si Surface Channel [J] . Tsuyoshi YAMAMURA, Shingo SATO, Yasuhisa OMURA Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第6A期

机译：具有（001）或（111）Si表面沟道的超薄体单栅极和双栅极绝缘体上金属-氧化物-半导体场效应晶体管的声子有限电子迁移率的经验模型
4. Modeling electrostatics of double gated monolayer MoS2 channel field-effect transistors [C] . Sheredeko Galina S., Zemtsov Kirill S., Zebrev Gennady I. International Conference on Microelectronics Proceedings . 2014

机译：双门式单层MOS2频道场效应晶体管建模静电
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS2 field-effect transistors [O] . Jakub Jadwiszczak, Pierce Maguire, Conor P Cullen, 2020

机译：局部氦离子辐射对合成单层MOS2场效应晶体管性能的影响
7. Field-Effect Transistors: Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates (Small 7/2019) [O] . Jeongkyun Roh, Jae Hyeon Ryu, Geun Woo Baek, 2019

机译：场效应晶体管：多层MOS2场效应晶体管的阈值电压控制通过十八烷基氯硅烷及其应用于由增强模式逻辑门驱动的有源矩阵量子点显示器（小7/2019）

Modeling electrostatics of double gated monolayer MoS2 channel field-effect transistors

摘要

著录项

相似文献

相关主题

期刊订阅