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Hydrogen Plasma Exposure of Monolayer MoS2 Field-Effect Transistors and Prevention of Desulfurization by Monolayer Graphene

机译：单层MOS2场效应晶体管的氢等离子体暴露和单层石墨烯的防止脱硫

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1. Hydrogen Plasma Exposure of Monolayer MoS2 Field-Effect Transistors and Prevention of Desulfurization by Monolayer Graphene [J] . Soman Anishkumar, Burke Robert A., Li Qin, ACS applied materials & interfaces . 2020,第33期

机译：单层MOS2场效应晶体管的氢等离子体暴露和单层石墨烯的防止脱硫
2. Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor [J] . Jangyup Son, Soogil Lee, Sang Jin Kim, Nature Communications . 2016,第1期

机译：具有可逆和可调宽带隙的氢化单层石墨烯及其场效应晶体管
3. Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor [J] . Jangyup Son, Soogil Lee, Sang Jin Kim, Nature Communications . 2016,第1期

机译：具有可逆和可调宽带隙的氢化单层石墨烯及其场效应晶体管
4. Modeling electrostatics of double gated monolayer MoS2 channel field-effect transistors [C] . Sheredeko Galina S., Zemtsov Kirill S., Zebrev Gennady I. 2014 29th International Conference on Microelectronics Proceedings . 2014

机译：双栅极单层MoS2沟道场效应晶体管的静电学建模
5. Compact Modeling of Ballistic Monolayer Black Phosphorus Metal-Oxide-Semiconductor Field-Effect Transistors [D] . Prentki, Rapha?l Joachim. 2017

机译：弹道单层黑色磷金属氧化物半导体场效应晶体管的紧凑型造型
6. Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor [O] . Jangyup Son, Soogil Lee, Sang Jin Kim, -1

机译：具有可逆和可调宽带隙的氢化单层石墨烯及其场效应晶体管
7. Field-Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors (Adv. Mater. 10/2014) [O] . Lifeng Wang, Bin Wu, Jisi Chen, 2014

机译：场效应晶体管：单层六边形氮化硼膜，具有大畴尺寸和清洁界面，用于增强基于石墨烯的场效应晶体管的迁移率（ADV。Mater。10/2014）

Hydrogen Plasma Exposure of Monolayer MoS2 Field-Effect Transistors and Prevention of Desulfurization by Monolayer Graphene

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