机译:GE / Si(100)基板上的高迁移率外延石墨烯
Tech Univ Chemnitz Inst Phys D-09126 Chemnitz Germany;
Max Planck Inst Festkarpoforsch D-70569 Stuttgart Germany;
Tech Univ Chemnitz Inst Phys D-09126 Chemnitz Germany;
Max Planck Inst Festkarpoforsch D-70569 Stuttgart Germany;
Max Planck Inst Festkarpoforsch D-70569 Stuttgart Germany;
Max Planck Inst Festkarpoforsch D-70569 Stuttgart Germany;
Leibniz Inst Innovat Mikroelekt D-15236 Frankfurt Germany;
Leibniz Inst Innovat Mikroelekt D-15236 Frankfurt Germany;
Georg August Univ Gottingen Phys Inst 4 D-37077 Gottingen Germany;
Georg August Univ Gottingen Phys Inst 4 D-37077 Gottingen Germany;
MAX IV Lab S-22100 Lund Sweden;
Tech Univ Chemnitz Inst Phys D-09126 Chemnitz Germany;
epitaxial graphene; charge carrier mobilities; Ge epilayers; Si(100); LEED; photoemission; STM; surface transport;
机译:GE / Si(100)基板上的高迁移率外延石墨烯
机译:3C-SiC(100)/ Si(100)衬底上外延纳米石墨烯的边缘态
机译:3C–SiC(100)/ Si(100)衬底上外延石墨烯的结构和电子性能研究
机译:对3C-SiC(110)和3C-SIC(100)虚拟基板上的外延石墨烯生长的透射电子显微镜观察
机译:氢封端的硅(111)和外延生长的石墨烯基板上功能有机物的表征和纳米图案化。
机译:3C–SiC(100)/ Si(100)衬底上外延石墨烯的结构和电子性能研究
机译:在3C-SiC(100)/ Si(100)基板上的外延石墨烯结构和电子性能研究