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Ge-added TiO2-Ta2O5-CaCO3 varistor ceramics

机译:GE添加的TiO2-TA2O5-Caco3压敏电阻陶瓷

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摘要

The influence of doping with Ge on the nonlinear coefficient a and the breakdown electric field E-B of TiO2-Ta2O5-CaCO3 varistor ceramics was investigated. In this study, TiO2-Ta2O5-CaCO3 varistor ceramics added with Ge was successfully prepared using the traditional method of ball milling-molding-sintering. The electrical performance, including the nonlinear coefficient alpha, the breakdown electric field E-B, and the leakage current J(L), are tested using a varistor direct current parameter instrument. The average barrier height Phi(B) of each sample is calculated using the relevant formula. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and scanning transmission electronic microscopy analyses demonstrated that Ge doping notably changed the microstructure of TiO2-Ta2O5-CaCO3 ceramics, thereby increasing a and decreasing E-B. When the doping contents of Ta2O5 and CaCO3 were 0.2 and 0.4 mol%, respectively, the optimum doping content of 0.9 mol% Ge exhibited high a (10.2), low E-B (14.1 V mm(-1)), and high Phi(B) (0.95 eV). These results are superior to previous findings. In addition, Ge as sintering aid reduced the sintering temperature caused by the low melting point. The optimal sintering temperature was 1300 degrees C for the TiO2-Ta2O5-CaCO3 ceramics doped with Ge. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译:研究了掺杂与Ge对非线性系数A和TiO2-Ta2O5-Caco3压敏电阻陶瓷的击穿电场E-B的影响。在本研究中,使用传统的球磨模塑烧结方法成功地制备了用GE加入的TiO2-Ta2O5-Caco3压敏电阻陶瓷。使用压敏电阻直流参数仪器测试包括非线性系数α,击穿电场E-B和漏电流J(L)的电性能。使用相关公式计算每个样品的平均屏障高度PHI(B)。 X射线衍射,X射线光电子能谱,扫描电子显微镜和扫描透射电子显微镜分析证明了Ge掺杂显着改变了TiO2-Ta2O5-CaCo3陶瓷的微观结构,从而增加了A和减少的E-B。当Ta2O5和CaCO 3的掺杂含量分别为0.2和0.4摩尔%时,最佳掺杂含量为0.9mol%Ge,呈现高A(10.2),低EB(14.1Vm(-1))和高phi(b )(0.95eV)。这些结果优于以前的发现。此外,GE作为烧结辅助助剂降低由低熔点引起的烧结温度降低。对于掺杂有GE的TiO2-Ta2O5-CaCo3陶瓷,最佳烧结温度为1300℃。 (c)2015 Elsevier Ltd和Techna Group S.R.L.版权所有。

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