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Sintering effect on varistor properties and degradation behavior of ZVMB varistor ceramics

机译:烧结对ZVMB压敏电阻陶瓷压敏电阻性能和降解行为的影响

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摘要

ZnO-V_2O_5-Mn_3O_4-Bi_2O_3 (ZVMB) varistor ceramics were sintered at a low temperature range of 800-875 ℃, and the microstructure, electrical properties, dielectric characteristics, and DC-accelerated aging behavior were systematically investigated. Analysis of the microstructure indicated that the average grain size increased from 3.8 to 6.4 μm with the increase of sintering temperature, and the density of the sintered pellets increased from 5.48 to 5.53 g/cm~3 when the sintering temperature was increased from 800 to 850 ℃, and then decreased when the sintering temperature was further increased. The breakdown field noticeably decreased from 13,412 to 706 V/cm with the increase of sintering temperature. The nonlinear coefficient exhibited a maximum value (43.0) at 825 ℃ and a minimum value (19.8) at 875 ℃. The varistors sintered at 850 ℃ exhibited the highest stability; variation rates for the breakdown field and the nonlinear coefficient were —10.3 and -50.2%, respectively, after application of a stress of 0.85 E_(1mA)/85 ℃/24 h.
机译:ZnO-V_2O_5-Mn_3O_4-Bi_2O_3(ZVMB)压敏电阻陶瓷在800-875℃的低温下烧结,系统地研究了其微观结构,电性能,介电特性和直流加速时效行为。显微组织分析表明,随着烧结温度的升高,平均晶粒度从3.8μm增大至6.4μm;当烧结温度从800升高至850时,烧结颗粒的密度从5.48增大至5.53 g / cm〜3。 ℃,然后当烧结温度进一步升高时降低。随着烧结温度的升高,击穿场明显从13,412降至706 V / cm。非线性系数在825℃时显示最大值(43.0),在875℃时显示最小值(19.8)。在850℃烧结的压敏电阻表现出最高的稳定性;在施加0.85 E_(1mA)/ 85℃/ 24 h的应力后,击穿场的变化率和非线性系数分别为-10.3%和-50.2%。

著录项

  • 来源
    《Journal of materials science》 |2017年第22期|17063-17069|共7页
  • 作者

    Choon-W. Nahm;

  • 作者单位

    Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University, Busan 614-714, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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