The effects of stack method sintering on the electrical properties of Nb, Ba, Bi doped TiO2 ring vaistors were studied by measuring and analyzing the varistor properties of the samples. The results show that the TiO2 ring vaistor made by stack sintering had higher varistor voltage and non-linear coefficient than that made by single sintering, but the electrostatic capacitance and electrostatic loss decreased. The TiO2 ring vaistor had higher caristor voltage and non-linear coefficient and smaller electrode-difference under plant vertical stack sintering condition, while the TiO3 ring varistor had bigger electrode-difference under side vertical stack sintering conditioa The varistor voltage of the plant vertical stack sintered TiO2 ring varistor decreased and then increased from the top to the bottom.%通过对压敏性能的测定与分析,研究了叠层方式烧结对铌、钡、铋掺杂TiO2环形压敏电阻电性能的影响.结果表明:叠层烧结获得的TiO2环形压敏电阻的压敏电压和非线性系数较单片烧结的高,但静电容量和静电损耗有所降低,平面垂直叠烧条件下TiO2环形压敏电阻有较高的压敏电压和非线性系数,极间差较小,而侧面垂直叠烧条件下的TiO2环形压敏电阻有较大的极间差；平面垂直叠烧TiO2环形压敏电阻从上到下压敏电压总体呈现先减小后增大的趋势.
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