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Ferroelectric and dielectric properties of manganese-doped Na0.5Bi0.5TiO3 nanocrystalline thin films prepared by metal organic decomposition: A single-layer thickness-dependent study

机译:金属有机分解制备的锰掺杂Na0.5bi0.5tio3纳米晶薄膜的铁电和介电性能:单层厚度依赖性研究

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摘要

2 at% Manganese-doped Na0.5Bi0.5TiO3 (NBTMn) thin films with single-layer thicknesses ranging from 15 to 45 nm/l were deposited on the indium tin oxide/glass substrates by a metal organic decomposition process and spin coating technique. The influence of single-layer thickness on the crystal structure, surface morphology, insulating ability, ferroelectric and dielectric properties was mainly investigated. Compared with the other films, NBTMn film with a single-layer thickness of 30 nm/l exhibits the (110)-preferred orientation and dense structure. Also, it shows the enhanced ferroelectricity with a large remanent polarization (P-r) of 38 mu C/cm(2) due to the preferred orientation and low leakage current density. Meanwhile, a high dielectric tunability of 39% for NBTMn with 30 nm/l can be observed by varying the measuring applied voltage and frequency. These results indicate that the suitable layer thickness is beneficial to improve the electrical performances of NBTMn thin film. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
机译:2在通过金属有机分解工艺和旋涂技术沉积在氧化铟锡/玻璃基板上的单层厚度的%锰掺杂的Na0.5bi0.5tio3(NBTMN)薄膜。单层厚度对晶体结构,表面形态,绝缘能力,铁电和介电性能的影响。与其他薄膜相比,单层厚度为30nm / l的NBTMN膜展示了(110) - 灵活的取向和致密结构。而且,由于优选的取向和低漏电流密度,它显示了具有38μC/ cm(2)的大的倒置极化(P-R)的增强的铁电性。同时,通过改变测量施加的电压和频率,可以观察到具有30nm / L的NBTMN的高介电随疗性39%。这些结果表明,合适的层厚度有利于改善NBTMN薄膜的电气性能。 (c)2016 Elsevier Ltd和Techna Group S.R.L.版权所有。

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