GaInAs/GaAs single mode vertical cavity surface emitting laser (VCSEL) array on GaAs(311)B

摘要

We have demonstrated a dynamically stable polarization operation of GalnAs/GaAs vertical-cavity surface-emitting laser (VCSEL) array grown on a GaAs (311)13 substrate. All of the devices exhibited single-transverse mode operation with an injection current up to three times the threshold. The array also exhibited stable-polarization operation with an orthogonal polarization suppression ratio (OPSR) of over 25 dB. In an experiment of 5 Gb/s non-return-to-zero (NRZ) pseudo-random bit sequence (PRBS) modulation, the OPSR was maintained being greater than 27 dB. These observed stable and single polarization characteristics were originated from the anisotropic optical gain of strained GalnA s/GaAs quantum wells formed on (311) B substrate. We also carried out an intensity noise measurement under single-transverse and stable polarization operation for the first time. In addition, we achieved 2.5 Gb/s data transmission through a l00m multi-mode fiber. No error floor was observed at -20 dBm of received power level.