GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311)B

摘要

We have demonstrated a dynamically stable polarization operation of GaInAs/GaAs vertical-cavity surface- emitting laser (VCSEL) array grown on a GaAs (311)B sub- strate. A fabricated 3 x 3 VCSEL array consists of devices with an oxide apperture of 3.4μm x 3.4μm. The threshold cur- rent was 0.61±0.05mA and the threshold voltage was 1.79± 0. 03V. All of the devices exhibited single-transverse mode oper- 1. ation with an injection current up to three times the threshold.