Single-transverse mode and stable-polarization operation under high-speed modulation of InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs (311) B substrate

摘要

We have demonstrated an oxide confinement vertical-cavity surface-emitting laser grown on a GaAs (311)B substrate, and achieved single-transverse mode and single-polarization operation in the entire tested current range. The threshold was 0.6 mA for a 2.7 /spl mu/m/spl times/2.9 /spl mu/m oxide aperture. Even under high-speed modulation up to 5 GHz, the device showed stable single-transverse mode and polarization. Sidemode suppression ratio and orthogonal polarization suppression ratio were over 30 and 10 dB, respectively.