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Strained-Layer InGaAs-GaAs- AlGaAs Lasers Grown by Molecular Beam Epitaxy for High-speed Modulation

机译：分子束外延生长的应变层InGaAs-GaAs-AlGaAs激光器用于高速调制

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Stephen D. Offsey; W. J. Schaff; Luke F. Lester; Student Member; L. F. Eastman; S. K. Mckernan;
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专利

1. Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation [J] . Offsey S.D., Schaff W.J. IEEE Journal of Quantum Electronics . 1991,第6期

机译：分子束外延生长用于高速调制的应变层InGaAs-GaAs-AlGaAs激光器
2. Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy [J] . Offsey S.D., Schaff W.J. IEEE Transactions on Electron Devices . 1989,第11期

机译：分子束外延生长的应变层InGaAs-GaAs-AlGaAs梯度折射率分离约束单量子阱激光器
3. AIGaInAs/InP Strained-Layer Quantum Well Lasers at 1 .3 μm Grown by Solid Source MoLecular Beam Epitaxy [J] . P. SAVOLAINEN, M. TOIVONEN, S. ORSILA Journal of Electronic Materials . 1999,第8期

机译：固体源分子束外延生长的1 .3μm的AIGaInAs / InP应变层量子阱激光器
4. Vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy [C] . Leinonen, P., Leinonen, . 2003

机译：具有分子束外延生长的AlGaInAs / AlGaAs量子阱的垂直腔表面发射激光器
5. Modelling, Design, Growth and Characterization of Strain Balanced Quantum Cascade Lasers (3-11mum), grown by Gas Source Molecular Beam Epitaxy. [D] . Bandyopadhyay, Neelanjan. 2015

机译：气体源分子束外延生长的应变平衡量子级联激光器（3-11μm）的建模，设计，生长和表征。
6. Magnetization reversal in YIG/GGG(111) nanoheterostructures grown by laser molecular beam epitaxy [O] . Boris B. Krichevtsov, Sergei V. Gastev, Sergey M. Suturin, 2017

机译：激光分子束外延生长的YIG / GGG（111）纳米异质结构中的磁化反转
7. Electrically Pumped 1.136 mum GaAsBi/AlGaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy [O] . Wu Xiaoyan, Pan Wenwu, Liu Juanjuan, 2017

机译：分子束外延生长的电泵浦1.136 mum GaasBi / alGaas量子阱激光器
8. AlGaAs/InGaAs/GaAs Strained-Layer Heterojunction Bipolar Transistors by Molecular Beam Epitaxy [R] . Sullivan, G. J., Asbeck, P. M., Chang, M. F., 1986

机译：分子束外延的alGaas / InGaas / Gaas应变层异质结双极晶体管

Strained-Layer InGaAs-GaAs- AlGaAs Lasers Grown by Molecular Beam Epitaxy for High-speed Modulation

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