A fully symbolic homotopy-based memristor model for applications to circuit simulation

摘要

Since the outcoming of the memristor, memristive systems and mem-elements in electronics, new features for analog and digital circuit design have been introduced, and as a result models for the memristor are strongly needed in order to incorporate the device to the design flow loop. In this paper, a model for the memristor is introduced, it is generated by solving the differential equation, that governs the physical functioning of the device, by using a homotopy formulation. The generated model is recast in fully symbolic form that can be used to carry out behavioral simulation of circuits containing memristors.