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On the Application of a Diffusive Memristor Compact Model to Neuromorphic Circuits

机译:扩散忆阻器紧凑模型在神经形态电路中的应用

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摘要

Memristive devices have found application in both random access memory and neuromorphic circuits. In particular, it is known that their behavior resembles that of neuronal synapses. However, it is not simple to come by samples of memristors and adjusting their parameters to change their response requires a laborious fabrication process. Moreover, sample to sample variability makes experimentation with memristor-based synapses even harder. The usual alternatives are to either simulate or emulate the memristive systems under study. Both methodologies require the use of accurate modeling equations. In this paper, we present a diffusive compact model of memristive behavior that has already been experimentally validated. Furthermore, we implement an emulation architecture that enables us to freely explore the synapse-like characteristics of memristors. The main advantage of emulation over simulation is that the former allows us to work with real-world circuits. Our results can give some insight into the desirable characteristics of the memristors for neuromorphic applications.
机译:忆阻器件已经发现在随机存取存储器和神经形态电路中都有应用。特别地,已知它们的行为类似于神经元突触的行为。然而,要获得忆阻器的样品并不简单,调整其参数以改变其响应需要艰苦的制造过程。此外,样本之间的差异性使基于忆阻器的突触的实验更加困难。通常的替代方法是模拟或仿真正在研究的忆阻系统。两种方法都需要使用精确的建模方程式。在本文中,我们提出了忆阻行为的扩散紧凑模型,该模型已经通过实验验证。此外,我们实现了一种仿真体系结构,使我们能够自由地探索忆阻器的类似突触的特性。与仿真相比,仿真的主要优势在于前者使我们能够处理现实世界的电路。我们的结果可以为神经形态应用的忆阻器的理想特性提供一些见识。

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