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首页> 外文期刊>Analog Integrated Circuits and Signal Processing >A 36 ppm/℃ BiCMOS current reference without requiring curvature-compensation
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A 36 ppm/℃ BiCMOS current reference without requiring curvature-compensation

机译:无需曲率补偿的36 ppm /℃BiCMOS电流基准

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摘要

A low temperature coefficient and high precision current reference generator, with simplified current biasing circuit with only four MOSFETs, has been designed using CSMC's 0.5 μm BiCMOS process. Utilizing source follower and emitter follower as the bandgap reference output stage, a high performance bandgap reference with no Early effect and low output resistance is realized. A one diode-connected circuit is introduced to further simplify the current biasing. Simulation results of the proposed current reference generator indicate that the output current of 2 μA exhibit a variation of 0.5% over the temperature range of -40 to 125℃ is achieved. The current reference draws 21 μA from a 5 V supply. Corner and two hundred runs Monte Carlo simulation show that the maximum deviation from the desired value of the reference current are less than 3.05% and ± 2.6%, respectively. This high precision current reference generator is intended for Organic LED driver circuits.
机译:采用CSMC的0.5μmBiCMOS工艺设计了一种低温度系数和高精度电流基准发生器,其简化的电流偏置电路仅包含四个MOSFET。利用源极跟随器和发射极跟随器作为带隙基准输出级,可以实现无早期效应和低输出电阻的高性能带隙基准。引入了一个二极管连接的电路,以进一步简化电流偏置。提出的电流基准发生器的仿真结果表明,在-40至125℃的温度范围内,2μA的输出电流表现出0.5%的变化。基准电流从5 V电源汲取21μA电流。转角和两百次蒙特卡洛模拟表明,与参考电流期望值的最大偏差分别小于3.05%和±2.6%。该高精度电流基准发生器用于有机LED驱动器电路。

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