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A 1.3 ppm/℃ BiCMOS bandgap voltage reference using piecewise-exponential compensation technique

机译:采用分段指数补偿技术的1.3 ppm /℃BiCMOS带隙基准电压源

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摘要

A high-order curvature-compensated BiCMOS bandgap voltage reference using piecewise-exponential compensation technique is presented in this paper. The circuit utilizes a variable gain current mirror to realize exponential compensation as well as a common emitter amplifier with local feedback to achieve a second correction. Implemented in 0.5-μm BCD process, the proposed voltage reference consumes a supply current of 17.5 μA at 2.5 V. A temperature coefficient(TC) of 1.3 ppm/℃, PSRR of more than 76 dB at low frequencies and a line regulation of 160 ppm/V from 2.5 to 5 V are easily achieved, which make it applied widely in portable equipments.
机译:本文提出了一种采用分段指数补偿技术的高阶曲率补偿BiCMOS带隙基准电压源。该电路利用可变增益电流镜来实现指数补偿,并利用具有局部反馈的公共发射极放大器来进行第二次校正。拟议的基准电压源采用0.5μmBCD工艺实施,在2.5V电压下消耗17.5μA的电源电流。温度系数(TC)为1.3 ppm /℃,低频时的PSRR超过76 dB,线路调整率为160容易达到2.5至5 V的ppm / V,使其广泛应用于便携式设备。

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