机译:A-40°C-125°C,1.08 ppm /°C,918 NW带隙电压参考,具有分段曲率补偿
Univ Macau State Key Lab Analog & Mixed Signal VLSI Macau 999078 Peoples R China|Univ Macau Inst Microelect Macau 999078 Peoples R China|Univ Macau Dept Elect & Comp Engn Fac Sci & Technol Macau 999078 Peoples R China;
Univ Macau State Key Lab Analog & Mixed Signal VLSI Macau 999078 Peoples R China|Univ Macau Inst Microelect Macau 999078 Peoples R China|Univ Macau Dept Elect & Comp Engn Fac Sci & Technol Macau 999078 Peoples R China;
Univ Macau State Key Lab Analog & Mixed Signal VLSI Macau 999078 Peoples R China|Univ Macau Inst Microelect Macau 999078 Peoples R China|Univ Macau Dept Elect & Comp Engn Fac Sci & Technol Macau 999078 Peoples R China;
Univ Macau State Key Lab Analog & Mixed Signal VLSI Macau 999078 Peoples R China|Univ Macau Inst Microelect Macau 999078 Peoples R China|Univ Macau Dept Elect & Comp Engn Fac Sci & Technol Macau 999078 Peoples R China;
Bandgap voltage reference; Temperature coefficient (TC); Segmented curvature compensation;
机译:具有二阶曲率补偿的0.5V电源,37.8nW,17.6ppm /℃的开关电容器带隙基准
机译:0.5V供电,37.8-NW,17.6-PPM /°C开关电容带隙参考,具有二阶曲率补偿
机译:CMOS带隙基准电压源的无电阻BJT偏置和曲率补偿电路(3.4nW)
机译:具有曲率补偿的1V,240 nW,7 ppm /°C,高PSRR CMOS参考电压电路
机译:参考电压使用迁移率和阈值电压温度效应的相互补偿。
机译:基于Mark-Segmented PI模型的往复线性电压下压电纳米定位阶段的磁滞补偿
机译:基于自适应参考温度的带隙电压基准曲率补偿技术
机译:带隙电压基准的高阶温度补偿(I)