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首页> 外文期刊>Microelectronics journal >A 0.5-V-supply, 37.8-nW, 17.6-ppm/°C switched-capacitor bandgap reference with second-order curvature compensation
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A 0.5-V-supply, 37.8-nW, 17.6-ppm/°C switched-capacitor bandgap reference with second-order curvature compensation

机译:0.5V供电,37.8-NW,17.6-PPM /°C开关电容带隙参考,具有二阶曲率补偿

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摘要

This paper presents a switched-capacitor (SC) bandgap reference (BGR) with second-order curvature compensation for ultra-low power systems. The gate-source voltage of a sub-threshold MOSFET is proposed to implement the second-order curvature compensation voltage in this work. And then, a SC network is used, not only to add the second-order voltage and the first-order one together, but also to fulfill the summing weight effectively and precisely. In this way, the silicon area and power consumption can be reduced simultaneously. Furthermore, the design methodology of summing weight is investigated, and thus the temperature coefficient (TC) can be significantly reduced. The proposed SC-BGR was implemented and simulated in a CMOS 0.18 mu m process, the average output voltage is 426.1 mV, achieving a TC of 17.6 ppm/degrees C from -20 to 100 degrees C under a 0.5 V minimum supply voltage. With the help of the SC architecture, a small chip area of 0.0975 mm(2) is achieved with only 37.8-nW power consumption.
机译:本文介绍了对超低功率系统的二阶曲率补偿的开关电容(SC)带隙参考(BGR)。提出了子阈值MOSFET的栅极源电压以在该工作中实现二阶曲率补偿电压。然后,使用SC网络,不仅要在一起将二阶电压和第一阶电压添加到,而且还可以有效地且精确地满足求和。以这种方式,可以同时减小硅面积和功耗。此外,研究了求和重量的设计方法,因此可以显着降低温度系数(Tc)。在CMOS0.18μm过程中实施和模拟所提出的SC-BGR,平均输出电压为426.1mV,在0.5V最小电源电压下从-20至100摄氏度中实现17.6ppm /°C的Tc。在SC架构的帮助下,只有37.8-NW功耗,实现了0.0975mm(2)的小芯片面积。

著录项

  • 来源
    《Microelectronics journal》 |2019年第5期|136-143|共8页
  • 作者单位

    South China Univ Technol Sch Elect & Informat Engn Guangzhou Guangdong Peoples R China;

    South China Univ Technol Sch Elect & Informat Engn Guangzhou Guangdong Peoples R China;

    South China Univ Technol Sch Elect & Informat Engn Guangzhou Guangdong Peoples R China;

    South China Univ Technol Sch Elect & Informat Engn Guangzhou Guangdong Peoples R China;

    South China Univ Technol Sch Elect & Informat Engn Guangzhou Guangdong Peoples R China;

    Univ Macau State Key Lab Analog & Mixed Signal VLSI Macau Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Bandgap reference; Switched-capacitor; High order curvature compensation; Ultra-low power;

    机译:带隙参考;开关电容;高阶曲率补偿;超低功率;

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