Sub-1 V band-gap based and MOS threshold-voltage based voltage references in 0.13 A mu m CMOS

摘要

Portable and implantable device applications require low supply voltage reference circuits due to increasing trend for lower power requirements. Voltage references have been proposed for operation below 1 V for CMOS and a comprehensive analysis of the behavior of the different topologies is needed for ultra-low power designs, in order to select the right circuit topology for a given requirement. This work compares two major classes of voltage reference topologies: threshold voltage (V-T0)-based and (V-G0) bandgap voltage-based reference circuits. Four different topologies of voltage-reference designs with 1-V supply were designed and fabricated in 130 nm CMOS process. Monte Carlo analysis shows the variability of the references and of their temperature coefficients (TC), and the results are compared to measured samples. Simulations and measurements show that the threshold voltage-based references are more susceptible to the variations in the CMOS fabrication process.