High P{sub}(1dB) and Low Quiescent Current SiGe HBT Power Amplifier MMIC Using Self Base Bias Control Circuit for 5,8GHz ETC Terminals

摘要

A 5.8GHz high P{sub}(1dB) and low quiescent SiGe HBT three-stage power amplifier (PA) MMIC using a self base bias control circuit is described. The self base bias control circuits are applied to the second and the final stage PA's, and automatically control the base current/voltage according to the output power level. As a result, high P{sub}(1dB) is obtained at a low quiescent current condition. The simulated results show that the proposed three-stage PA MMIC achieves P{sub}(1dB) improvement of 1.7dB compared with a conventional PA using a constant base voltage bias circuit at the same quiescent current condition. The fabricated PA MMIC achieves P{sub}(1dB) of 15.3dBm, gain of 19.6dB with the quiescent current of 22.2mA at 5.8GHz.