Extraction of GaAs/InGaP HBT small-signal equivalent circuit based on a genetic algorithm

摘要

This work delineates a new extraction method of a heterojunction bipolar transistor small-signal equivalent circuit using a genetic algorithm with roughly estimated model elements. The present approach based on the simple genetic algorithm with a robust boundary selection is adopted to extract a bridged T equivalent circuit elements of a 2×10 μm{sup}2 GaAs/InGaP HBT. The small-signal model parameters was extracted using the genetic algorithm from S-parameters measured at different frequencies under multiple forward-active biases, which demonstrate physically meaningful values and consistency. The agreement between the measured and modeled S-parameters is excellent over the frequency range of 2 to 26.5GHz.