Small-signal equivalent circuit resistance extraction method of semiconductor device

摘要

The present invention relates to a method of extracting a model parameter of a resistor for measuring characteristics of a semiconductor device, that is, a method of extracting a resistance, that is, an impedance, of a small signal equivalent circuit model of a dipole junction transistor, Calculating a resistance value and a capacitance value using the z-variable data; and calculating a resistance value and a capacitance value using the z-variable data, Calculating the impedance by using the value and the capacitance, and determining the base resistance of the transistor by comparing the resistance value with the capacitance value and the impedance value.