Work Function of GaAs(001) Surface Obtained by in-situ Scanning Electron Microscopy

摘要

It is found that the secondary electron intensity from GaAs(00l) surfaces, during molecular beam epitaxy (MBE) growth, relates to the work function (WE). Quantitative theoretical evaluation of the WF for the surface reconstructions was performed using the electron counting model. The relative and absolute values of WF agree well with the reported values. The WF for the other components, mixed compositions and surface reconstruction can be predicted.