In-Situ Scanning Electron Microscopy of Surface Roughening Processes in GaAs Molecular Beam Epitaxy

摘要

Surface roughening processes in the molecular beam epitaxy growth of GaAs is studied by in-situ scanning electron microscopy. Three types of onset of three dimensional growth are observed, pure 3D growth, coexistence of 3D and 2D growths, and 2D to 3D transition.