Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors

摘要

Penetration effects of various electrode materials, namely Al, Au, and Cu, on the physical and electrical characteristics of amorphous oxide semiconductor thin film transistors (TFTs) were investigated. Amorphous indium gallium zinc oxide (a-IGZO) TFTs were fabricated with conventional staggered bottom gate structures on a p-type Si substrate. X-ray photoemission spectroscopy (XPS) analysis under the electrode deposition area revealed variations in the oxygen bonding states and material compositions of the a-IGZO layer. Field-emission scanning electron microscopy (FE-SEM) with the line scan of energy dispersive spectroscopy (EDS) showed lateral penetration by the electrode metal. To compare the electrical characteristics of the tested TFTs, the initial currentevoltage (I-V) transfer characteristics were examined. In addition, the tested TFTs fabricated using various electrode materials were tested under bias stress to verify the correlations between variations in TFT characteristics and both the metal work function and penetration-induced oxygen vacancies in the channel around the contact area. (C) 2015 Elsevier B.V. All rights reserved.